QPD1015

GaN FETs DC-3.7GHz 65W 50V SSG 20dB GaN

SKU: QPD1015

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R 9,596.33

R 6,391.63

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GaN FETs DC-3.7GHz 65W 50V SSG 20dB GaN

Products specifications

Vds - Drain-Source Breakdown Voltage	50 V
Output Power	70 W
Minimum Operating Temperature	- 40 C
Transistor Type	HEMT
Id - Continuous Drain Current	2.5 A
Vgs - Gate-Source Breakdown Voltage	145 V
Maximum Operating Temperature	+ 85 C
Transistor Polarity	N-Channel
Pd - Power Dissipation	64 W
Gain	20 dB
Packaging	Tray
Product Type	RF JFET Transistors
Technology	GaN SiC

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Products specifications

Vds - Drain-Source Breakdown Voltage	50 V
Output Power	70 W
Minimum Operating Temperature	- 40 C
Transistor Type	HEMT
Id - Continuous Drain Current	2.5 A
Vgs - Gate-Source Breakdown Voltage	145 V
Maximum Operating Temperature	+ 85 C
Transistor Polarity	N-Channel
Pd - Power Dissipation	64 W
Gain	20 dB
Packaging	Tray
Product Type	RF JFET Transistors
Technology	GaN SiC