QPD1014SR

GaN FETs .03-1.2GHz 15W 50V GaN

SKU: QPD1014SR

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R 2,552.77

R 1,833.26

R 1,443.61

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GaN FETs .03-1.2GHz 15W 50V GaN

Products specifications

Maximum Operating Temperature	+ 85 C
Transistor Type	HEMT
Product Type	RF JFET Transistors
Transistor Polarity	N-Channel
Gain	18.4 dB
Maximum Drain Gate Voltage	55 V
Id - Continuous Drain Current	1 A
Pd - Power Dissipation	15.8 W
Vds - Drain-Source Breakdown Voltage	50 V
Vgs - Gate-Source Breakdown Voltage	145 V
Technology	GaN SiC
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	- 40 C
Output Power	12.5 W

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Products specifications

Maximum Operating Temperature	+ 85 C
Transistor Type	HEMT
Product Type	RF JFET Transistors
Transistor Polarity	N-Channel
Gain	18.4 dB
Maximum Drain Gate Voltage	55 V
Id - Continuous Drain Current	1 A
Pd - Power Dissipation	15.8 W
Vds - Drain-Source Breakdown Voltage	50 V
Vgs - Gate-Source Breakdown Voltage	145 V
Technology	GaN SiC
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	- 40 C
Output Power	12.5 W