GaN FETs DC-2.7GHz 150W PAE 64.8%
Products specifications
Product Type | RF JFET Transistors |
Minimum Operating Temperature | - 40 C |
Maximum Drain Gate Voltage | 65 V |
Packaging | Cut Tape, MouseReel, Reel |
Pd - Power Dissipation | 67 W |
Id - Continuous Drain Current | 1.7 A |
Gain | 21.8 dB |
Technology | GaN SiC |
Output Power | 178 W |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 85 C |
Transistor Type | HEMT |