QPD1010

GaN FETs DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN

SKU: QPD1010

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R 2,205.13

R 1,102.43

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GaN FETs DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN

Products specifications

Gain	24.7 dB
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C
Vgs - Gate-Source Breakdown Voltage	145 V
Output Power	11 W
Packaging	Waffle
Pd - Power Dissipation	13.5 W
Product Type	RF JFET Transistors
Id - Continuous Drain Current	400 mA
Transistor Polarity	N-Channel
Technology	GaN SiC
Transistor Type	HEMT
Vds - Drain-Source Breakdown Voltage	50 V

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Products specifications

Gain	24.7 dB
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C
Vgs - Gate-Source Breakdown Voltage	145 V
Output Power	11 W
Packaging	Waffle
Pd - Power Dissipation	13.5 W
Product Type	RF JFET Transistors
Id - Continuous Drain Current	400 mA
Transistor Polarity	N-Channel
Technology	GaN SiC
Transistor Type	HEMT
Vds - Drain-Source Breakdown Voltage	50 V