QPD1008L

GaN FETs DC-3.2GHz 120W 50V SSG 17.5dB GaN
Lead Time: 140 Days

SKU: QPD1008L

Availability: 68 in stock

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R 11,296.30

R 7,531.22

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GaN FETs DC-3.2GHz 120W 50V SSG 17.5dB GaN
Lead Time: 140 Days

Products specifications

Gain	17.5 dB
Pd - Power Dissipation	127 W
Vgs - Gate-Source Breakdown Voltage	145 V
Vds - Drain-Source Breakdown Voltage	50 V
Transistor Polarity	N-Channel
Transistor Type	HEMT
Maximum Operating Temperature	+ 85 C
Output Power	162 W
Minimum Operating Temperature	- 40 C
Id - Continuous Drain Current	4 A
Product Type	RF JFET Transistors
Technology	GaN SiC
Mounting Style	Screw Mount
Packaging	Tray

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Products specifications

Gain	17.5 dB
Pd - Power Dissipation	127 W
Vgs - Gate-Source Breakdown Voltage	145 V
Vds - Drain-Source Breakdown Voltage	50 V
Transistor Polarity	N-Channel
Transistor Type	HEMT
Maximum Operating Temperature	+ 85 C
Output Power	162 W
Minimum Operating Temperature	- 40 C
Id - Continuous Drain Current	4 A
Product Type	RF JFET Transistors
Technology	GaN SiC
Mounting Style	Screw Mount
Packaging	Tray