QPD1004SR

GaN FETs .03-1.2GHz 25W 50V GaN

SKU: QPD1004SR

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R 4,148.26

R 3,008.40

R 2,173.09

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GaN FETs .03-1.2GHz 25W 50V GaN

Products specifications

Transistor Type	HEMT
Gain	20.8 dB
Pd - Power Dissipation	27.6 W
Vgs - Gate-Source Breakdown Voltage	145 V
Vds - Drain-Source Breakdown Voltage	50 V
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Id - Continuous Drain Current	3.6 A
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C
Output Power	40 W
Technology	GaN SiC
Maximum Drain Gate Voltage	55 V
Packaging	Cut Tape, MouseReel, Reel

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Products specifications

Transistor Type	HEMT
Gain	20.8 dB
Pd - Power Dissipation	27.6 W
Vgs - Gate-Source Breakdown Voltage	145 V
Vds - Drain-Source Breakdown Voltage	50 V
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Id - Continuous Drain Current	3.6 A
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C
Output Power	40 W
Technology	GaN SiC
Maximum Drain Gate Voltage	55 V
Packaging	Cut Tape, MouseReel, Reel