GaN FETs 1.2-1.4GHz 500W 50V SSG 20dB GaN
Lead Time: 140 Days
Products specifications
Transistor Type | HEMT |
Vgs - Gate-Source Breakdown Voltage | 145 V |
Packaging | Tray |
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 85 C |
Technology | GaN SiC |
Id - Continuous Drain Current | 15 A |
Pd - Power Dissipation | 370 W |
Product Type | RF JFET Transistors |
Output Power | 540 W |
Vds - Drain-Source Breakdown Voltage | 50 V |
Gain | 19.9 dB |