GaN FETs DC-4GHz 45W GaN 48V
Lead Time: 112 Days
Products specifications
Gain | 21.7 dB |
Output Power | 45 W |
Product Type | RF JFET Transistors |
Minimum Operating Temperature | - 40 C |
Technology | GaN |
Vgs - Gate-Source Breakdown Voltage | - |
Id - Continuous Drain Current | - |
Packaging | Cut Tape, Reel |
Maximum Drain Gate Voltage | - |
Pd - Power Dissipation | 45 W |
Maximum Operating Temperature | - |
Vds - Drain-Source Breakdown Voltage | - |