RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
Lead Time: 0 Days
Products specifications
Product Type | RF Bipolar Transistors |
Output Power | 10 dBm |
Technology | Si |
Collector- Emitter Voltage VCEO Max | 16 V |
Transistor Polarity | NPN |
Maximum Operating Temperature | + 150 C |
Transistor Type | Bipolar Wideband |
Emitter- Base Voltage VEBO | 2 V |
Continuous Collector Current | 10 mA |
Configuration | Single |
Minimum Operating Temperature | - 40 C |