RF JFET Transistors JFET N-CH 25V 10mA
Products specifications
Transistor Type | JFET |
Vgs - Gate-Source Breakdown Voltage | - 25 V |
Id - Continuous Drain Current | 25 mA |
Vds - Drain-Source Breakdown Voltage | 25 V |
Maximum Drain Gate Voltage | 25 V |
Pd - Power Dissipation | 250 mW |
Maximum Operating Temperature | + 150 C |
Transistor Polarity | N-Channel |
Product Type | RF JFET Transistors |
Packaging | Cut Tape, MouseReel, Reel |
Technology | Si |