RF JFET Transistors N-Channel Single '+/- 25V 15mA
Products specifications
Technology | Si |
Product Type | RF JFET Transistors |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 250 mW |
Vgs - Gate-Source Breakdown Voltage | 25 V |
Transistor Type | JFET |
Id - Continuous Drain Current | 15 mA |
Vds - Drain-Source Breakdown Voltage | 25 V |
Packaging | Cut Tape, MouseReel, Reel |