RF JFET Transistors TAPE7 FET-RFSS
Products specifications
Transistor Polarity | N-Channel |
Product Type | RF JFET Transistors |
Technology | Si |
Maximum Drain Gate Voltage | 20 V |
Transistor Type | JFET |
Vgs - Gate-Source Breakdown Voltage | 20 V |
Vds - Drain-Source Breakdown Voltage | 20 V |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 250 mW |
Packaging | Cut Tape, MouseReel, Reel |
Id - Continuous Drain Current | 30 mA |