A3T23H300W23SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 63 W Avg., 30 V
Lead Time: 70 Days

SKU: A3T23H300W23SR6

Availability: 99 in stock

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1+

150+

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R 2,515.08

R 2,089.07

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RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 63 W Avg., 30 V
Lead Time: 70 Days

Products specifications

Output Power	63 W
Gain	15.6 dB
Product Type	RF MOSFET Transistors
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 40 C
Technology	Si
Transistor Polarity	Dual N-Channel
Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Id - Continuous Drain Current	3.2 A

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Products specifications

Output Power	63 W
Gain	15.6 dB
Product Type	RF MOSFET Transistors
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 40 C
Technology	Si
Transistor Polarity	Dual N-Channel
Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Id - Continuous Drain Current	3.2 A