RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 71 W Avg., 28 V
Products specifications
Maximum Operating Temperature | + 150 C |
Packaging | Reel |
Technology | Si |
Id - Continuous Drain Current | 3.2 A |
Transistor Polarity | Dual N-Channel |
Minimum Operating Temperature | - 40 C |
Vds - Drain-Source Breakdown Voltage | - 500 mV, 65 V |
Product Type | RF MOSFET Transistors |