A3T21H360W23SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 56 W Avg., 28 V

SKU: A3T21H360W23SR6

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Quantity

150+

Price

R 1,809.56

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RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 56 W Avg., 28 V

Products specifications

Maximum Operating Temperature	+ 150 C
Technology	Si
Output Power	56 W
Gain	16.4 dB
Transistor Polarity	Dual N-Channel
Minimum Operating Temperature	- 40 C
Id - Continuous Drain Current	2.4 A
Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Product Type	RF MOSFET Transistors

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Products specifications

Maximum Operating Temperature	+ 150 C
Technology	Si
Output Power	56 W
Gain	16.4 dB
Transistor Polarity	Dual N-Channel
Minimum Operating Temperature	- 40 C
Id - Continuous Drain Current	2.4 A
Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Product Type	RF MOSFET Transistors