A3T19H455W23SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V

SKU: A3T19H455W23SR6

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Quantity

150+

Price

R 2,226.14

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RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V

Products specifications

Output Power	81 W
Transistor Polarity	Dual N-Channel
Gain	16.4 dB
Minimum Operating Temperature	- 40 C
Technology	Si
Id - Continuous Drain Current	3.6 A
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Product Type	RF MOSFET Transistors

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Products specifications

Output Power	81 W
Transistor Polarity	Dual N-Channel
Gain	16.4 dB
Minimum Operating Temperature	- 40 C
Technology	Si
Id - Continuous Drain Current	3.6 A
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Product Type	RF MOSFET Transistors