A3G35H100-04SR3

RF MOSFET Transistors Airfast RF Power GaN Transistor, 3400-3600 MHz, 14 W Avg., 48 V

SKU: A3G35H100-04SR3

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R 2,707.07

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R 2,248.22

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RF MOSFET Transistors Airfast RF Power GaN Transistor, 3400-3600 MHz, 14 W Avg., 48 V

Products specifications

Id - Continuous Drain Current	8.04 mA
Output Power	14 W
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	125 V
Transistor Polarity	Dual N-Channel
Gain	14 dB
Technology	Si
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C

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Products specifications

Id - Continuous Drain Current	8.04 mA
Output Power	14 W
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	125 V
Transistor Polarity	Dual N-Channel
Gain	14 dB
Technology	Si
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C