A3G20S250-01SR3

RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V

SKU: A3G20S250-01SR3

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Quantity

250+

Price

R 2,028.49

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RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V

Products specifications

Technology	GaN Si
Gain	18.2 dB
Packaging	Reel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	150 V
Id - Continuous Drain Current	250 mA
Product Type	RF MOSFET Transistors
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C

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Products specifications

Technology	GaN Si
Gain	18.2 dB
Packaging	Reel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	150 V
Id - Continuous Drain Current	250 mA
Product Type	RF MOSFET Transistors
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C