RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-2200 MHz, 107 W Avg., 48 V
Products specifications
Gain | 15.4 dB |
Maximum Operating Temperature | + 150 C |
Output Power | 107 W |
Minimum Operating Temperature | - 55 C |
Transistor Polarity | Dual N-Channel |
Vds - Drain-Source Breakdown Voltage | 125 V |
Id - Continuous Drain Current | 200 mA |
Technology | Si |
Product Type | RF MOSFET Transistors |