A2V07H525-04NR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 595-851 MHz, 120 W Avg., 48 V

SKU: A2V07H525-04NR6

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150+

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R 2,277.57

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RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 595-851 MHz, 120 W Avg., 48 V

Products specifications

Minimum Operating Temperature	- 40 C
Gain	17.5 dB
Output Power	120 W
Maximum Operating Temperature	+ 150 C
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	- 500 mV, 105 V
Technology	Si
Id - Continuous Drain Current	2.8 A
Transistor Polarity	Dual N-Channel

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Products specifications

Minimum Operating Temperature	- 40 C
Gain	17.5 dB
Output Power	120 W
Maximum Operating Temperature	+ 150 C
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	- 500 mV, 105 V
Technology	Si
Id - Continuous Drain Current	2.8 A
Transistor Polarity	Dual N-Channel