RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 420-851 MHz, 107 W Avg., 48 V
Products specifications
Maximum Operating Temperature | + 150 C |
Output Power | 107 W |
Gain | 19.9 dB |
Id - Continuous Drain Current | 2.1 A |
Minimum Operating Temperature | - 40 C |
Product Type | RF MOSFET Transistors |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | - 500 mV, 105 V |
Transistor Polarity | Dual N-Channel |