RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 38 W Avg., 28 V
Products specifications
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 40 C |
Output Power | 38 W |
Product Type | RF MOSFET Transistors |
Id - Continuous Drain Current | 1.5 A |
Vds - Drain-Source Breakdown Voltage | - 500 mV, 65 V |
Maximum Operating Temperature | + 150 C |
Technology | Si |
Gain | 19.1 dB |