RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 36 W Avg., 28 V
Products specifications
Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 150 C |
Output Power | 36 W |
Transistor Polarity | Dual N-Channel |
Product Type | RF MOSFET Transistors |
Gain | 17.2 dB |
Vds - Drain-Source Breakdown Voltage | - 500 mV, 65 V |
Technology | Si |
Id - Continuous Drain Current | 1 A |