MOSFETs 2N7002PS/SOT363/SC-88
Products specifications
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 60 V |
Rds On - Drain-Source Resistance | 1.6 Ohms |
Qg - Gate Charge | 0.8 nC |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 20 V |
Id - Continuous Drain Current | 320 mA |
Number of Channels | 2 Channel |
Vgs th - Gate-Source Threshold Voltage | 1.1 V |
Minimum Operating Temperature | - 55 C |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Configuration | Dual |
Pd - Power Dissipation | 420 mW |