MOSFET Trans MOSFET N-CH 60V 0.3A 3-Pin
Products specifications
Technology | Si |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 350 mW |
Packaging | Cut Tape, MouseReel, Reel |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Vds - Drain-Source Breakdown Voltage | 60 V |
Rds On - Drain-Source Resistance | 1.6 Ohms |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 1.09 nC |
Id - Continuous Drain Current | 300 mA |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |