TPW4R50ANH,L1Q

MOSFETs N-CH Mosfet 60V N-CH Mosfet 100V
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SKU: TPW4R50ANH,L1Q

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R 51.39

R 40.06

R 33.47

R 30.83

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MOSFETs N-CH Mosfet 60V N-CH Mosfet 100V
Lead Time: 0 Days

Products specifications

Pd - Power Dissipation	142 W
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	2 V
Id - Continuous Drain Current	92 A
Vgs - Gate-Source Voltage	10 V
Technology	Si
Vds - Drain-Source Breakdown Voltage	100 V
Rds On - Drain-Source Resistance	4.5 mOhms
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	58 nC
Channel Mode	Enhancement
Configuration	Single

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Products specifications

Pd - Power Dissipation	142 W
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	2 V
Id - Continuous Drain Current	92 A
Vgs - Gate-Source Voltage	10 V
Technology	Si
Vds - Drain-Source Breakdown Voltage	100 V
Rds On - Drain-Source Resistance	4.5 mOhms
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	58 nC
Channel Mode	Enhancement
Configuration	Single