MOSFET POWER MOSFET TRANSISTOR PD=170W
Products specifications
Rds On - Drain-Source Resistance | 1.29 mOhms |
Configuration | Single |
Qg - Gate Charge | 91 nC |
Pd - Power Dissipation | 170 W |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 260 A |
Transistor Polarity | N-Channel |
Technology | Si |
Packaging | Cut Tape, MouseReel, Reel |
Vds - Drain-Source Breakdown Voltage | 60 V |