MOSFETs POWER MOSFET TRANSISTOR PD=170W
Lead Time: 35 Days
Products specifications
Configuration | Single |
Pd - Power Dissipation | 170 W |
Qg - Gate Charge | 122 nC |
Vds - Drain-Source Breakdown Voltage | 45 V |
Rds On - Drain-Source Resistance | 1.65 mOhms |
Number of Channels | 1 Channel |
Packaging | Cut Tape, MouseReel, Reel |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Technology | Si |
Id - Continuous Drain Current | 300 A |