TPN4R712MD,L1Q

MOSFETs P-Channel Mosfet 20V UMOS-VI
Lead Time: 168 Days

SKU: TPN4R712MD,L1Q

Availability: 5685 in stock

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MOSFETs P-Channel Mosfet 20V UMOS-VI
Lead Time: 168 Days

Products specifications

Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	20 V
Qg - Gate Charge	65 nC
Transistor Polarity	P-Channel
Vgs th - Gate-Source Threshold Voltage	500 mV
Id - Continuous Drain Current	36 A
Rds On - Drain-Source Resistance	4.7 mOhms
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	1 Channel
Pd - Power Dissipation	42 W
Vgs - Gate-Source Voltage	4.5 V
Channel Mode	Enhancement
Configuration	Single

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Products specifications

Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	20 V
Qg - Gate Charge	65 nC
Transistor Polarity	P-Channel
Vgs th - Gate-Source Threshold Voltage	500 mV
Id - Continuous Drain Current	36 A
Rds On - Drain-Source Resistance	4.7 mOhms
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	1 Channel
Pd - Power Dissipation	42 W
Vgs - Gate-Source Voltage	4.5 V
Channel Mode	Enhancement
Configuration	Single