TPN3300ANH,LQ

MOSFETs N-Ch 100V 21A 27W UMOSVIII 680pF 11nC
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SKU: TPN3300ANH,LQ

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MOSFETs N-Ch 100V 21A 27W UMOSVIII 680pF 11nC
Lead Time: 0 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	100 V
Vgs th - Gate-Source Threshold Voltage	4 V
Id - Continuous Drain Current	21 A
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	20 V
Technology	Si
Transistor Polarity	N-Channel
Pd - Power Dissipation	27 W
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	28 mOhms
Configuration	Single
Qg - Gate Charge	11 nC
Channel Mode	Enhancement

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Products specifications

Vds - Drain-Source Breakdown Voltage	100 V
Vgs th - Gate-Source Threshold Voltage	4 V
Id - Continuous Drain Current	21 A
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	20 V
Technology	Si
Transistor Polarity	N-Channel
Pd - Power Dissipation	27 W
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	28 mOhms
Configuration	Single
Qg - Gate Charge	11 nC
Channel Mode	Enhancement