MOSFET N-Ch 80V 22A 27W UMOSVIII 710pF 11nC
Products specifications
Technology | Si |
Qg - Gate Charge | 11 nC |
Pd - Power Dissipation | 27 W |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 80 V |
Rds On - Drain-Source Resistance | 25 mOhms |
Vgs - Gate-Source Voltage | 20 V |
Packaging | Cut Tape, MouseReel, Reel |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 22 A |
Configuration | Single |