MOSFET N-Ch 30V 2230pF 40nC 2.5mOhm 85A 35W
Products specifications
Pd - Power Dissipation | 35 W |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Configuration | Single |
Rds On - Drain-Source Resistance | 2.1 mOhms |
Vgs th - Gate-Source Threshold Voltage | 2.3 V |
Packaging | Reel |
Technology | Si |
Qg - Gate Charge | 40 nC |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 85 A |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 20 V |