TPN22006NH,LQ

MOSFETs N-Ch 60V 21A 18W UMOSVIII 710pF 12nC
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SKU: TPN22006NH,LQ

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R 16.34

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R 8.56

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MOSFETs N-Ch 60V 21A 18W UMOSVIII 710pF 12nC
Lead Time: 0 Days

Products specifications

Rds On - Drain-Source Resistance	18 mOhms
Id - Continuous Drain Current	21 A
Technology	Si
Qg - Gate Charge	12 nC
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	4 V
Pd - Power Dissipation	18 W
Vds - Drain-Source Breakdown Voltage	60 V
Channel Mode	Enhancement
Packaging	Cut Tape, MouseReel, Reel
Configuration	Single
Number of Channels	1 Channel
Transistor Polarity	N-Channel

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Products specifications

Rds On - Drain-Source Resistance	18 mOhms
Id - Continuous Drain Current	21 A
Technology	Si
Qg - Gate Charge	12 nC
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	4 V
Pd - Power Dissipation	18 W
Vds - Drain-Source Breakdown Voltage	60 V
Channel Mode	Enhancement
Packaging	Cut Tape, MouseReel, Reel
Configuration	Single
Number of Channels	1 Channel
Transistor Polarity	N-Channel