TPN2010FNH,L1Q

MOSFETs UMOSVIII 250V 200m (VGS=10V) TSON-ADV
Lead Time: 58 Days

SKU: TPN2010FNH,L1Q

Availability: 11650 in stock

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MOSFETs UMOSVIII 250V 200m (VGS=10V) TSON-ADV
Lead Time: 58 Days

Products specifications

Technology	Si
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Pd - Power Dissipation	39 W
Vgs - Gate-Source Voltage	20 V
Configuration	Triple
Qg - Gate Charge	7 nC
Vds - Drain-Source Breakdown Voltage	250 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	9.9 A
Vgs th - Gate-Source Threshold Voltage	4 V
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	168 mOhms

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Products specifications

Technology	Si
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Pd - Power Dissipation	39 W
Vgs - Gate-Source Voltage	20 V
Configuration	Triple
Qg - Gate Charge	7 nC
Vds - Drain-Source Breakdown Voltage	250 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	9.9 A
Vgs th - Gate-Source Threshold Voltage	4 V
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	168 mOhms