MOSFET N-Ch 30V 2970pF 41nC 33A 30W
Products specifications
Number of Channels | 1 Channel |
Technology | Si |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Pd - Power Dissipation | 104 W |
Packaging | Cut Tape, MouseReel, Reel |
Vgs th - Gate-Source Threshold Voltage | 1.1 V |
Vgs - Gate-Source Voltage | 20 V |
Maximum Operating Temperature | + 175 C |
Rds On - Drain-Source Resistance | 1.2 mOhms |
Id - Continuous Drain Current | 188 A |
Configuration | Single |
Qg - Gate Charge | 41 nC |
Vds - Drain-Source Breakdown Voltage | 30 V |