MOSFET N-Ch DTMOS VII-H 42W 1230pF 36A 100V
Products specifications
Configuration | Single |
Technology | Si |
Pd - Power Dissipation | 42 W |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Qg - Gate Charge | 19 nC |
Vds - Drain-Source Breakdown Voltage | 100 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Packaging | Cut Tape, MouseReel, Reel |
Rds On - Drain-Source Resistance | 13 mOhms |
Id - Continuous Drain Current | 36 A |