MOSFETs N-Ch DTMOS VII-H 19W 510pF 31A 30V
Lead Time: 0 Days
Products specifications
Qg - Gate Charge | 7.5 nC |
Packaging | Cut Tape, MouseReel, Reel |
Pd - Power Dissipation | 19 W |
Vgs th - Gate-Source Threshold Voltage | 2.3 V |
Technology | Si |
Vgs - Gate-Source Voltage | 20 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vds - Drain-Source Breakdown Voltage | 30 V |
Channel Mode | Enhancement |
Configuration | Single |
Rds On - Drain-Source Resistance | 12.6 mOhms |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 31 A |