MOSFET N-Ch 120V 59A 61W UMOSVIII 2180pF 33nC
Products specifications
Vds - Drain-Source Breakdown Voltage | 100 V |
Pd - Power Dissipation | 61 W |
Channel Mode | Enhancement |
Configuration | Single |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 33 nC |
Number of Channels | 1 Channel |
Technology | Si |
Rds On - Drain-Source Resistance | 7.4 mOhms |
Id - Continuous Drain Current | 59 A |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Packaging | Cut Tape, MouseReel, Reel |
Vgs - Gate-Source Voltage | 20 V |