MOSFET U-MOSVIII-H 60V 55A 31nC MOSFET
Products specifications
Technology | Si |
Rds On - Drain-Source Resistance | 6.1 mOhms |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Qg - Gate Charge | 31 nC |
Vgs - Gate-Source Voltage | 20 V |
Channel Mode | Enhancement |
Packaging | Cut Tape, MouseReel, Reel |
Pd - Power Dissipation | 45 W |
Id - Continuous Drain Current | 55 A |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |