TPH6R30ANL,L1Q

MOSFETs U-MOSVIII-H 100V 66A 55nC MOSFET
Lead Time: 112 Days

SKU: TPH6R30ANL,L1Q

Availability: 10661 in stock

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MOSFETs U-MOSVIII-H 100V 66A 55nC MOSFET
Lead Time: 112 Days

Products specifications

Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	55 nC
Pd - Power Dissipation	54 W
Number of Channels	1 Channel
Technology	Si
Transistor Polarity	N-Channel
Packaging	Cut Tape, Reel
Vgs th - Gate-Source Threshold Voltage	1.5 V
Minimum Operating Temperature	-
Rds On - Drain-Source Resistance	5.1 mOhms
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	66 A
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Configuration	Single

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Products specifications

Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	55 nC
Pd - Power Dissipation	54 W
Number of Channels	1 Channel
Technology	Si
Transistor Polarity	N-Channel
Packaging	Cut Tape, Reel
Vgs th - Gate-Source Threshold Voltage	1.5 V
Minimum Operating Temperature	-
Rds On - Drain-Source Resistance	5.1 mOhms
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	66 A
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Configuration	Single