MOSFETs X35PBF Power MOSFET Trans VGS10VVDS200V
Lead Time: 44 Days
Products specifications
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 13 A |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Vds - Drain-Source Breakdown Voltage | 200 V |
Qg - Gate Charge | 11.2 nC |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 20 V |
Packaging | Cut Tape, MouseReel, Reel |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 54 mOhms |
Pd - Power Dissipation | 57 W |
Technology | Si |
Configuration | Single |
Number of Channels | 1 Channel |