TPH5200FNH,L1Q

MOSFET Power MOSFET N-Channel

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R 32.15

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MOSFETs Power MOSFET N-Channel
Lead Time: 172 Days

Products specifications

Channel Mode	Enhancement
Technology	Si
Configuration	Single
Rds On - Drain-Source Resistance	44 mOhms
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Pd - Power Dissipation	78 W
Id - Continuous Drain Current	26 A
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	22 nC
Vds - Drain-Source Breakdown Voltage	250 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	20 V

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Products specifications

Channel Mode	Enhancement
Technology	Si
Configuration	Single
Rds On - Drain-Source Resistance	44 mOhms
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Pd - Power Dissipation	78 W
Id - Continuous Drain Current	26 A
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	22 nC
Vds - Drain-Source Breakdown Voltage	250 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	20 V