TPH4R606NH,L1Q

MOSFETs U-MOSVIII-H 60V 85A 49nC MOSFET
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SKU: TPH4R606NH,L1Q

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MOSFETs U-MOSVIII-H 60V 85A 49nC MOSFET
Lead Time: 0 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	4 V
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Technology	Si
Id - Continuous Drain Current	85 A
Vds - Drain-Source Breakdown Voltage	60 V
Pd - Power Dissipation	63 W
Rds On - Drain-Source Resistance	3.8 mOhms
Packaging	Cut Tape, MouseReel, Reel
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Qg - Gate Charge	49 nC
Configuration	Single
Channel Mode	Enhancement

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Products specifications

Vgs th - Gate-Source Threshold Voltage	4 V
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Technology	Si
Id - Continuous Drain Current	85 A
Vds - Drain-Source Breakdown Voltage	60 V
Pd - Power Dissipation	63 W
Rds On - Drain-Source Resistance	3.8 mOhms
Packaging	Cut Tape, MouseReel, Reel
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Qg - Gate Charge	49 nC
Configuration	Single
Channel Mode	Enhancement