MOSFETs N-Ch 30V 2940pF 50nC 134A 90W
Products specifications
Configuration | Single |
Qg - Gate Charge | 50 nC |
Vgs th - Gate-Source Threshold Voltage | 1.1 V |
Id - Continuous Drain Current | 134 A |
Vgs - Gate-Source Voltage | 20 V |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 175 C |
Channel Mode | Enhancement |
Technology | Si |
Packaging | Cut Tape, MouseReel, Reel |
Pd - Power Dissipation | 90 W |
Rds On - Drain-Source Resistance | 2.2 mOhms |