TPH12008NH,L1Q

MOSFET N-Ch 80V 1490pF 22nC 12.3mOhm 44A 48W

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R 15.18

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R 10.88

R 10.22

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MOSFETs N-Ch 80V 1490pF 22nC 12.3mOhm 44A 48W
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Products specifications

Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	80 V
Configuration	Single
Technology	Si
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	44 A
Pd - Power Dissipation	48 W
Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	22 nC
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	10.1 mOhms
Packaging	Cut Tape, MouseReel, Reel
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	20 V

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Products specifications

Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	80 V
Configuration	Single
Technology	Si
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	44 A
Pd - Power Dissipation	48 W
Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	22 nC
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	10.1 mOhms
Packaging	Cut Tape, MouseReel, Reel
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	20 V