TPH1110FNH,L1Q

MOSFET X35PBF Power MOSFET Transistr95ohm250V

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MOSFETs X35PBF Power MOSFET Transistr95ohm250V
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Products specifications

Technology	Si
Rds On - Drain-Source Resistance	95 mOhms
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	10 A
Configuration	Single
Channel Mode	Enhancement
Qg - Gate Charge	11 nC
Vds - Drain-Source Breakdown Voltage	250 V
Pd - Power Dissipation	1.6 W
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Packaging	Cut Tape, MouseReel, Reel
Vgs th - Gate-Source Threshold Voltage	4 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel

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Products specifications

Technology	Si
Rds On - Drain-Source Resistance	95 mOhms
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	10 A
Configuration	Single
Channel Mode	Enhancement
Qg - Gate Charge	11 nC
Vds - Drain-Source Breakdown Voltage	250 V
Pd - Power Dissipation	1.6 W
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Packaging	Cut Tape, MouseReel, Reel
Vgs th - Gate-Source Threshold Voltage	4 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel