TPH1110ENH,L1Q

MOSFET UMOSVIII 200V 131m (VGS=10V) SOP-ADV

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Quantity

5000+

Price

R 16.94

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MOSFETs UMOSVIII 200V 131m (VGS=10V) SOP-ADV

Products specifications

Qg - Gate Charge	7 nC
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	4 V
Pd - Power Dissipation	42 W
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	96 mOhms
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Technology	Si
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Packaging	Reel
Configuration	Triple
Id - Continuous Drain Current	13 A
Vds - Drain-Source Breakdown Voltage	200 V

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Products specifications

Qg - Gate Charge	7 nC
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	4 V
Pd - Power Dissipation	42 W
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	96 mOhms
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Technology	Si
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Packaging	Reel
Configuration	Triple
Id - Continuous Drain Current	13 A
Vds - Drain-Source Breakdown Voltage	200 V