MOSFETs U-MOSVIII-H 60V 40A 23nC MOSFET
Lead Time: 168 Days
Products specifications
Vds - Drain-Source Breakdown Voltage | 60 V |
Pd - Power Dissipation | 34 W |
Rds On - Drain-Source Resistance | 17 mOhms |
Qg - Gate Charge | 23 nC |
Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Technology | Si |
Configuration | Single |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Packaging | Cut Tape, MouseReel, Reel |
Vgs - Gate-Source Voltage | 20 V |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 40 A |