MOSFET MOSFET P-CH/NPN 32V, 6A
Products specifications
Pd - Power Dissipation | 1.06 W |
Number of Channels | 1 Channel |
Packaging | Reel |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Vds - Drain-Source Breakdown Voltage | 32 V |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 34 nC |
Transistor Polarity | P-Channel, NPN |
Rds On - Drain-Source Resistance | 27 mOhms |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Configuration | Single |
Id - Continuous Drain Current | 5.5 A |
Technology | Si |