MOSFETs N-Ch 20V FET 21A 30W 1860pF 16nC
Products specifications
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 21 A |
Technology | Si |
Number of Channels | 1 Channel |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 12 V |
Pd - Power Dissipation | 30 W |
Vgs th - Gate-Source Threshold Voltage | 500 mV |
Qg - Gate Charge | 16 nC |
Configuration | Single |
Transistor Polarity | N-Channel |
Packaging | Cut Tape, Reel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Rds On - Drain-Source Resistance | 4.5 mOhms |